With a total investment of 10 billion yuan, this silicon carbide semiconductor project started

Recently, the 11th batch of Anhui Province’s implementation of the “six stability” major projects centralized start-up site promotion meeting Hefei branch and Changfeng County’s third-generation power semiconductor (silicon carbide) industrial park project start-up activities were held in Changfeng County.

Image source: Tianyan Changfeng County Small and Medium Enterprises Public Service

It is reported that the third-generation power semiconductor (silicon carbide) industrial park project in Changfeng County has a planned total investment of 10 billion yuan. It is located in Changfeng (Shuangfeng) Economic Development Zone and covers an area of ​​88 acres. It is a research and development and production base for the industrial chain of equipment manufacturing, crystal growth production, substrate processing, and epitaxy production.

On August 9 this year, Roshow Technology announced that it will jointly invest in the construction of a third-generation power semiconductor (silicon carbide) industrial park with Hefei Changfeng County People’s Government in Changfeng County, Hefei, including but not limited to silicon carbide and other third-generation power semiconductors. R&D and industrialization projects of generation semiconductors, including R&D and production of silicon carbide crystal growth, substrate fabrication, epitaxial growth, etc.

To this end, Roshow also jointly invested with Hefei Beicheng Capital Management Co., Ltd. and Changfeng Tetrahedron New Materials Technology Center (Limited Partnership) to establish Hefei Roshow Semiconductors Co., Ltd. as the project company for this project.

It is reported that the project will be constructed in three phases, of which the first phase is expected to invest 2.1 billion yuan. After completion, it will have an annual production capacity of 240,000 conductive silicon carbide substrate wafers and 50,000 epitaxial wafers; the second phase It is expected to invest 3.9 billion yuan. After the completion of production, it will form an annual production capacity of 100,000 6-inch epitaxial wafers and an annual output of 100,000 8-inch substrate wafers; 10,000 pieces of 8-inch epitaxial wafers and an annual production capacity of 150,000 pieces of 8-inch substrate wafers.